ABB 3BHE039203R0101｜IGCT Power Module｜

Parameter
Rated voltage: 6 kV (up to 6.5 kV)
Rated current: 360 A (continuous)
Switching frequency: up to 2 kHz (typical 500-1000 Hz)
Blocking voltage: 6000 V level
Cooling method: forced air cooling/water cooling (water cooling is mainly used under high-power conditions)
Working temperature: -40 ℃~+85 ℃
Driver power supply: 24 VDC (powered by the driver board)
Structure and Characteristics
Integrated design: IGCT chip+freewheeling diode+gate driver circuit integrated into one, low inductance packaging.
Low loss: The conduction voltage is reduced, the switching loss is small, and the system efficiency can reach 98%+.
High reliability: pressure bonded structure, uniform silicon wafer, strong resistance to thermal cycling, MTBF>6 years.
High speed hard drive: The gate pole drive is built-in, eliminating the need for external complex drive boards and simplifying the system.

Application
High voltage frequency converter (MV Drive): drive for metallurgical rolling mills, mining mills, and large water pumps/fans.
Flexible transmission of power grid: STATCOM (Static Synchronous Compensator), SVG, HVDC converter valve.
Power quality management: APF, SVC, active filtering, and reactive power compensation.
Traction and ships: electric locomotives, ship main propulsion inverters.

ABB 3BHE039203R0101｜IGCT Power Module｜