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ABB 3BHL000391P0101 5SHX1445H0001 ｜IGCT Module｜
Electrical Characteristics
Peak Repetitive Blocking (Shutdown / Reverse) Voltage: 4500 V
Average On-State Current: 350 A
Non-Repetitive Peak Surge Current: 8000 A (8.3 ms)
Typical On-State Voltage Drop: ≤ 1.5 V
Junction Temperature Range: −40 °C to +125 °C
Mechanical Characteristics
Dimensions (L × W × H): Approximately 34.5 × 28.3 × 27.28 cm
Weight: Approximately 1.26 kg
Protection Rating: IP20
Core Functions and Advantages
Advanced Technology Integration
Combines the low on-state conduction characteristics of thyristors with the fast switching capability of transistors
Features low gate triggering power, enabling easy integration of gate drive and state monitoring circuits
Incorporates buffer structure design and anode transparent emitter technology, effectively reducing dynamic losses and improving overall operating efficiency
High Thermal Performance and Reliability
Utilizes pressure-bonded ceramic packaging with a ceramic substrate and metal heat sink for excellent thermal conductivity
Supports both forced air cooling and water cooling, ensuring reliable operation under high-power and high-current conditions
Designed to prevent thermal damage during continuous high-load operation
Proven through rigorous electrical and mechanical testing, offering strong resistance to vibration and mechanical shock
Well suited for harsh industrial environments requiring high reliability and long service life
ABB 3BHL000391P0101 5SHX1445H0001 ｜IGCT Module｜
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