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ABB 5SDF1045H0002 3BHL000986P3002｜High Voltage IGBT Module｜
Three-Phase IGBT Module — Half-Bridge Topology
1. Specifications
| Parameter | Specification |
|---|---|
| Device Type | Three-phase IGBT module (half-bridge topology) |
| Rated Voltage (V<sub>CE</sub>) | 1700 V (recommended DC bus voltage ≤ 1200 V) |
| Rated Current (I<sub>C</sub>) | 450 A @ 25 °C case temperature (rated operating conditions) |
| Package Form | SEMITRANS 3 standard package (modular design for easy installation and heat dissipation) |
| Chip Technology | ABB 7th-generation IGBT chip with low conduction loss and high switching frequency (typical V<sub>CE(sat)</sub> ≤ 1.8 V, switching frequency up to 20 kHz) |
| Heat Dissipation Interface | Standard copper substrate compatible with water-cooled and air-cooled systems |
| Isolation Level | 2500 Vrms (IEC 60747 compliant) |
| Operating Temperature (T<sub>j</sub>) | –40 °C to +150 °C (junction temperature) |
2. Core Functions & Advantages
High Power Density
Optimized chip layout and package design achieve 450 A / 1700 V performance in a compact form factor.
Ideal for high-voltage inverters, energy storage inverters, and other space-constrained devices.
Low Loss Characteristics
7th-generation IGBT chip minimizes conduction and switching losses.
Improves overall system efficiency (typical ≥ 98.5%) and reduces energy consumption during operation.
High Reliability
Integrated freewheeling diode (FWD) with high surge current capability.
Package uses temperature-resistant insulation materials to withstand industrial temperature fluctuations and vibration.
Easy Integration
Standardized SEMITRANS 3 interface fits ABB or third-party cooling systems and driver boards.
Simplifies system design, assembly, and maintenance.
ABB 5SDF1045H0002 3BHL000986P3002｜High Voltage IGBT Module｜
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